77 K operation of AlGaAs/GaAs quantum cascade laser at 9 um

Authors

  • Kamil Kosiel Institute of Electron Technology
  • Maciej Bugajski Institute of Electron Technology
  • Anna Szerling Institute of Electron Technology
  • Justyna Kubacka-Traczyk Institute of Electron Technology
  • Piotr Karbownik Institute of Electron Technology
  • Emilia Pruszyńska-Karbownik Institute of Electron Technology
  • Jan Muszalski Institute of Electron Technology
  • Adam Łaszcz Institute of Electron Technology
  • Przemek Romanowski 2Institute of Physics, Polish Academy of Sciences
  • Michał Wasiak Institute of Physics, Technical University of Łódź
  • Włodzimierz Nakwaski Institute of Physics, Technical University of Łódź
  • Irina Makarowa TopGaN
  • Piotr Perlin TopGaN

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v1i1.14

Abstract

The cryogenic-temperature (77 K), pulsed mode operation of GaAs-based quantum cascade laser (QCL) is reported. This has been achieved by the use of GaAs/Al0.45Ga0.55As heterostructure. The laser design followed an 'anticrossed-diagonal' scheme of Page et al. [1]. The QCL structures were grown by MBE, with Riber Compact 21T reactor. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si3N4 for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses.

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References:
  1. H. Page, C. Becker, A. Robertson, G. Glastre, V. Ortiz, C. Sirtori," 300 K operation of a GaAs-based quantum-cascade laser at ??9 ?m", Applied Physics Letters, vol.78,. 3529 (2001). [CrossRef]
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Author Biography

Maciej Bugajski, Institute of Electron Technology

Department of Physics and Technology of Low Dimensional Structures

Professor, Head of Department

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Published

2009-03-28

How to Cite

[1]
K. Kosiel, “77 K operation of AlGaAs/GaAs quantum cascade laser at 9 um”, Photonics Lett. Pol., vol. 1, no. 1, pp. pp. 16–18, Mar. 2009.

Issue

Vol. 1 No. 1 (2009)

Section

Articles

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