Room temperature AlGaAs/GaAs quantum cascade lasers

Abstract

The room temperature (293K), pulsed mode operation of a GaAs-based quantum cascade laser (QCL) is reported. This has been achieved by the use of GaAs/Al_0.45Ga_0.55As heterostructure. Its design follows an "anticrossed-diagonal" scheme. The QCL structures were grown by MBE in a Riber Compact 21T reactor. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and Si₃N₄ for electrical insulation. Double plasmon confinement with Al-free waveguide has been used to minimize absorption losses. High operating temperatures have been achieved by careful optimization of growth technology and using metallic high reflectivity facet coating on the back facet of the laser.  

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References:

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