Performance of a nitrogen implanted large aperture THz emitter

Authors

  • Krzysztof Tomasz Świtkowski Faculty of Physics, Warsaw University of Technology
  • Cezariusz Jastrzębski Faculty of Physics, Warsaw University of Technology
  • Norbert Pałka Institute of Optoelectronics, Military University of Technology
  • Jan Dyczewski Institute of Electron Technology
  • Adam Barcz

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v4i1.276

Abstract

Improved bandwidth of a large aperture nitrogen implanted GaAs photoconductive THz emitter is presented in this paper. An effect of nitrogen ion implantation on semi-insulating GaAs has been studied in a sample implanted at two doses: 3×1014 and 6×1014 ions/cm2. The carrier life time of the investigated material was measured by means of the femtosecond time-resolved-reflectance technique. The implantation process reduced the carrier lifetime of GaAs by 65%.The bandwidth of the THz emitter was tested in a Time Domain Spectroscopy arrangement. Usable bandwidth of the TDS set-up based on the implanted emitter increased from 1 to 1.5THz.

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Published

2012-03-29

How to Cite

[1]
K. T. Świtkowski, C. Jastrzębski, N. Pałka, J. Dyczewski, and A. Barcz, “Performance of a nitrogen implanted large aperture THz emitter”, Photonics Lett. Pol., vol. 4, no. 1, pp. pp. 32–34, Mar. 2012.

Issue

Vol. 4 No. 1 (2012)

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Articles

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