DW VECSEL - structure design and MBE fabrication

Authors

  • Agata Jasik Institute of Electron Technology
  • Jan Muszalski Institute of Electron Technology
  • Anna Wójcik-Jedlińska Institute of Electron Technology
  • Justyna Kubacka-Traczyk Institute of Electron Technology
  • Michał Wasiak Lodz University of Technology
  • Adam K. Sokół Institute of Electron Technology
  • Iwona Sankowska Institute of Electron Technology

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v5i3.430

Abstract

We demonstrate dual-wavelength emission from optically pumped vertical-external-cavity surface-emitting laser. The active region containing two sets of quantum wells is divided into two sections with thicknesses providing comparable pump absorption. The sections are separated by an AlAs blocking layer to prevent carrier flow between them. The structure was grown by molecular beam epitaxy. The continuous wave operation was simultaneously detected at 957 nm and 1011 nm.

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References
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Published

2013-09-26

How to Cite

[1]
A. Jasik, “DW VECSEL - structure design and MBE fabrication”, Photonics Lett. Pol., vol. 5, no. 3, pp. pp. 91–93, Sep. 2013.

Issue

Vol. 5 No. 3 (2013)

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Articles

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