In-situ optical diagnostics of boron-doped diamond films growth

Abstract

Interferometry is desirable method for in-situ measurement of thin, dielectric film growth, as it don't modify conditions of film deposition. Here we present interferometrical measurements of thickness of doped diamond films during Chemical Vapor Deposition (CVD) process. For this purpose we used semiconductor laser with 405 nm wavelength. Additional ex-situ measurement using spectral interferometry and ellipsometry have been performed. We found that doping diamond with boron does not cause degradation of interference of light inside the film. To our knowledge this is first study of optical monitoring of boron doped, polycrystalline diamond films deposition.

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