Room temperature AlInAs/InGaAs/inP quantum cascade lasers

Authors

  • Piotr Gutowski Institute of Electron Technology
  • Piotr Karbownik Institute of Electron Technology
  • Artur Trajnerowicz Institute of Electron Technology
  • Kamil Pierściński Institute of Electron Technology
  • Dorota Pierscińska Institute of Electron Technology
  • Iwona Sankowska Institute of Electron Technology
  • Justyna Kubacka-Traczyk Institute of Electron Technology
  • Maciej Sakowicz Institute of Electron Technology
  • Maciej Bugajski Institute of Electron Technology

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v6i4.504

Abstract

The room-temperature (300 K), pulsed mode operation of InP-based quantum cascade laser (QCL) is reported. This has been achieved by the use of lattice matched AlInAs/InGaAs/InP heterostructure. Its design follows a 4-well, 2-phonon resonance scheme. The QCL structures were grown by MBE in Riber Compact 21T reactor. The lasers utilize AlInAs waveguide and were grown exclusively by MBE without MOVPE regrowth. High operating temperatures have been achieved by careful optimization of growth and processing technology.

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References
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  4. M. Bugajski, K. Kosiel, A. Szerling, P. Karbownik, K. Pierściński, D. Pierścińska, G. Hałdaś and A. Kolek, "High performance GaAs/AlGaAs quantum cascade lasers: optimization of electrical and thermal properties", Semiconductor Lasers and Laser Dynamics V, K. Panajotov, M. Sciamanna, A. Valle, R. Michalzik, (eds.), Proc. of SPIE Vol. 8432, 84320I (2012) CrossRef
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Author Biographies

Piotr Gutowski, Institute of Electron Technology

Department of Photonics

 

Piotr Karbownik, Institute of Electron Technology

Department of Photonics

Artur Trajnerowicz, Institute of Electron Technology

Department of Photonics

Kamil Pierściński, Institute of Electron Technology

Department of Photonics

Dorota Pierscińska, Institute of Electron Technology

Department of Photonics

Iwona Sankowska, Institute of Electron Technology

Department of Photonics

Justyna Kubacka-Traczyk, Institute of Electron Technology

Department of Photonics

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Published

2014-12-31

How to Cite

[1]
P. Gutowski, “Room temperature AlInAs/InGaAs/inP quantum cascade lasers”, Photonics Lett. Pol., vol. 6, no. 4, pp. pp. 142–144, Dec. 2014.

Issue

Vol. 6 No. 4 (2014)

Section

Articles

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