Impact of proton implantation parameters on the photoconductivity of photorefractive multiple quantum wells

Authors

  • Błażej Jabłoński West Pomeranian University of Technology in Szczecin
  • Agnieszka Branecka West Pomeranian University of Technology in Szczecin
  • Eliza Miśkiewicz West Pomeranian University of Technology in Szczecin
  • Andrzej Ziółkowski West Pomeranian University of Technology in Szczecin
  • Ewa Weinert-Rączka West Pomeranian University of Technology in Szczecin

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v7i4.613

Abstract

Semi-insulating GaAs/AlGaAs multiple quantum wells are photorefractive materials with high sensitivity and a short response time. Semi-insulation of these structures is commonly obtained by proton implantation. We present the measurements of photoconductivity in the samples with different proton doses. The results were compared to the theoretically predicted relationship between photoconductivity and the donor to acceptor concentration ratio. This allows to estimate the impact of proton dose on deep donor concentration.

Full Text: PDF

References
  1. D.D. Nolte, "Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications", J. Appl. Phys. 85, 6259 (1999). CrossRef
  2. D.D. Nolte, M.R. Melloch, in Photorefractive effects and Materials, ed. D.D. Nolte (Kluwer, Dordrecht, 1995). CrossRef
  3. Q. Wang, R.M. Brubaker, D.D. Nolte, M.R. Meloch, "Photorefractive quantum wells: transverse Franz–Keldysh geometry", J. Opt. Soc. Am. B 9, 1626 (1992). CrossRef
  4. Q. Wang, RM. Brubaker, D.D. Nolte, "Photorefractive phase shift induced by hot-electron transport: multiple-quantum-well structures", J. Opt. Soc. Am. B 11, 1773 (1994). CrossRef
  5. M. Wichtowski, A. Ziolkowski, E. Weinert-Rączka, "A general approach to the space?charge field solution in photorefractive materials in a TWM geometry", J. Opt. 12, 065201 (2010). CrossRef
  6. A. Ziółkowski, "Self-bending of light in photorefractive semiconductors with hot-electron effect", Opt. Expr. 22, 4599 (2014). CrossRef
  7. K. Seeger, Semiconductors Physics, fifth ed., Chapter 1 (Springer-Verlag, Berlin, 1991). CrossRef
  8. S.M. Sze, Physics of Semiconductors Devices, Second ed., Chapter 1 (Wiley, New York, 1981).
  9. S. Balasubramanian, I. Lahiri, Y. Ding, M.R. Melloch, D.D. Nolte, "Two-wave-mixing dynamics and nonlinear hot-electron transport in transverse-geometry photorefractive quantum wells studied by moving gratings", Appl. Phys. B 68, 863 (1999). CrossRef
  10. P. Yeh in Introduction to Photorefractive Nonlinear Optics, (Wiley, New York, 1993). CrossRef

Downloads

Published

2015-12-31

How to Cite

[1]
B. Jabłoński, A. Branecka, E. Miśkiewicz, A. Ziółkowski, and E. Weinert-Rączka, “Impact of proton implantation parameters on the photoconductivity of photorefractive multiple quantum wells”, Photonics Lett. Pol., vol. 7, no. 4, pp. pp. 121–123, Dec. 2015.

Issue

Vol. 7 No. 4 (2015)

Section

Articles

License

Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal. Authors are able to enter into separate, additional contractual arrangements for the non-exclusive distribution of the journal's published version of the work (e.g., post it to an institutional repository or publish it in a book), with an acknowledgement of its initial publication in this journal. Authors are permitted and encouraged to post their work online (e.g., in institutional repositories or on their website) prior to and during the submission process, as it can lead to productive exchanges, as well as earlier and greater citation of published work (See The Effect of Open Access).