Bismuth (III) Telluride (Bi2Te3) topological insulator embed in PVA as passive Q-switcher at 2 micron region

Authors

  • Nur Hidayah Muhammad Apandi Department of Electronics System Engineering, Malaysia Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia
  • Fauzan Ahmad Department of Electronics System Engineering, Malaysia Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia
  • Siti Nur Fatin Zuikafly Department of Electronics System Engineering, Malaysia Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia
  • Mohd Haniff Ibrahim Faculty of electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
  • Sulaiman Wadi Harun Photonic Research Center, University of Malaya, 50603, Kuala Lumpur, Malaysia

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v8i4.685

Abstract

We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse laser. The experimental works show that the proposed passive saturable absorber operates at input pump power ranges from 637 mW to 784 mW with central wavelength of 1957.6 nm. We observed the tunable repetition rate from 12.6 kHz to 26.1 kHz with the shortest pulse width of 2.22 us. The laser produces maximum instantaneous output peak power and pulse energy of 0.42 W and 0.94 uJ, respectively.

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Published

2016-12-31

How to Cite

[1]
N. H. Muhammad Apandi, F. Ahmad, S. N. F. Zuikafly, M. H. Ibrahim, and S. W. Harun, “Bismuth (III) Telluride (Bi2Te3) topological insulator embed in PVA as passive Q-switcher at 2 micron region”, Photonics Lett. Pol., vol. 8, no. 4, pp. pp. 101–103, Dec. 2016.

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Vol. 8 No. 4 (2016)

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Articles

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