The impact of electron and hole trapping coefficient on nonlinear phenomena in photorefractive multiple quantum well structures

Authors

  • Błażej Jabłoński West Pomeranian University of Technology
  • Andrzej Ziółkowski West Pomeranian University of Technology
  • Agnieszka Branecka West Pomeranian University of Technology
  • Ewa Weinert-Rączka West Pomeranian University of Technology

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v8i4.694

Abstract

Semiconductor photorefractive quantum wells belong to materials with strong optical nonlinearity. One of the parameters that may affect the course of nonlinear phenomena in these materials is the electron and hole trapping coefficient. We present the results of a numerical analysis aimed to find out, how electric field-dependent trapping coefficients affect the process of space-charge field formation in multiple quantum wells in the phenomenon of photorefractive two-wave mixing.

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References
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Published

2016-12-31

How to Cite

[1]
B. Jabłoński, A. Ziółkowski, A. Branecka, and E. Weinert-Rączka, “The impact of electron and hole trapping coefficient on nonlinear phenomena in photorefractive multiple quantum well structures”, Photonics Lett. Pol., vol. 8, no. 4, pp. pp. 125–127, Dec. 2016.

Issue

Vol. 8 No. 4 (2016)

Section

Articles

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