Influence of the ion implantation on the electroabsorption spectrum in the photorefractive GaAs/AlGaAs quantum wells

Authors

  • Eliza Magdalena Miśkiewicz Faculty of Electrical Engineering, West Pomeranian University of Technology, al. Piastów 17, 70-310 Szczecin
  • Marek Wichtowski Faculty of Electrical Engineering, West Pomeranian University of Technology, al. Piastów 17, 70-310 Szczecin
  • Ewa Weinert-Rączka Faculty of Electrical Engineering, West Pomeranian University of Technology, al. Piastów 17, 70-310 Szczecin

DOI:

https://doi.org/10.4302/photon.%20lett.%20pl.v8i1.623

Abstract

Dark resistivity and electrooptic effect are two of the necessary conditions crucial for the photorefractive effect to occur. Proton implantation used for increasing the dark resistivity of semiconductor heterostructures can influence the electrooptic coefficient. In this paper, there are presented the results of absorption and electroabsorption spectra measurements in semi-insulating GaAs/Al0.3Ga0.7As multiple quantum well (MQW) structures. The dependence was analyzed between the electroabsorption amplitude near the excitonic peaks and the different proton implantation parameters.

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References
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Published

2016-03-31

How to Cite

[1]
E. M. Miśkiewicz, M. Wichtowski, and E. Weinert-Rączka, “Influence of the ion implantation on the electroabsorption spectrum in the photorefractive GaAs/AlGaAs quantum wells”, Photonics Lett. Pol., vol. 8, no. 1, pp. pp. 17–19, Mar. 2016.

Issue

Vol. 8 No. 1 (2016)

Section

Articles

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